Anisotropic bow and plastic deformation of GaN on silicon-Reference-Cited by-同舟云学术

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Anisotropic bow and plastic deformation of GaN on silicon

Published:2013-05 Issue: Volume:370 Page:278-281
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dadgar A.,Fritze S.,Schulz O.,Hennig J.,Bläsing J.,Witte H.,Diez A.,Heinle U.,Kunze M.,Daumiller I.,Haberland K.,Krost A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. New technology approaches;Dadgar,2010

2. Improving GaN-on-silicon properties for GaN device epitaxy

3. Power electronics on InAlN/(In)GaN: Prospect for a record performance

4. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

5. Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor

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1. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers;Materials;2023-06-08

2. Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator;ECS Journal of Solid State Science and Technology;2023-02-01

3. Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications;Journal of Physics D: Applied Physics;2022-11-14

4. GaN-on-Silicon Growth Features: Controlled Plastic Deformation;Technical Physics Letters;2021-12-20

5. High-frequency AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates;Japanese Journal of Applied Physics;2020-02-28

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