Growth of bulk GaN crystal by Na flux method under various conditions-Reference-Cited by-同舟云学术

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Growth of bulk GaN crystal by Na flux method under various conditions

Published:2012-07 Issue:1 Volume:350 Page:72-74
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mori Y.,Imade M.,Murakami K.,Takazawa H.,Imabayashi H.,Todoroki Y.,Kitamoto K.,Maruyama M.,Yoshimura M.,Kitaoka Y.,Sasaki T.

Funder

Industrial Technology Research Grant Program from NEDO

MEXT through Grant-in-Aids for Scientific Research (B)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation

2. High Quality GaN Grown by Raised-Pressure HVPE

3. Growth and characterization of freestanding GaN substrates

4. Crystal growth of GaN by ammonothermal method

5. A GaN bulk crystal with improved structural quality grown by the ammonothermal method

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3. Exploring structural, electronic, magnetic, and optical response of GaN-X (X=Sr, ba, cs, mg) materials for optoelectronic applications;Physica B: Condensed Matter;2024-01

4. Growth of bulk GaN crystals for the production of substrates;Reference Module in Materials Science and Materials Engineering;2024

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