Single crystalline Tm2O3 films grown on Si (001) by atomic oxygen assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer
2. Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications
3. Epitaxial growth of praseodymium oxide on silicon
4. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
5. Epitaxial growth of Er2O3 films on Si(001)
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