Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers
Author:
Funder
Korean Government
Korea government
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE
2. Photoconductance measurements on InTlSb/InSb/GaAs grown by low‐pressure metalorganic chemical vapor deposition
3. Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)
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