Macrosegregation in vertical Bridgman grown Ge1−xSix alloy with large melt volume: Limit of complete mixing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Si/SiGe heterostructures: from material and physics to devices and circuits
2. Doubling speed using strained Si/SiGe CMOS technology
3. Silicon photonics: a bright future?
4. Toward Silicon-Based Lasers for Terahertz Sources
5. Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates
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2. Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth;ECS Transactions;2018-07-20
3. Dynamic analysis of rapid-melting growth using SiGe on insulator;Thin Solid Films;2014-04
4. Melt zone growth of Ge-rich Ge1−Si bulk crystals;Journal of Crystal Growth;2013-08
5. Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth;Applied Physics Letters;2012-12-10
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