Microstructure of PAMBE-grown InN layers on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Effective electron mass and phonon modes inn-type hexagonal InN
3. High mobility InN epilayers grown on AlN epilayer templates
4. MBE growth and magnetic properties of InMnN diluted magnetic semiconductor
5. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
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1. Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE;Materials;2019-09-30
2. Epitaxial growth of semipolar InN($10\bar{1}3$) on LaAlO3substrate: Epitaxial relationship analysis;Japanese Journal of Applied Physics;2017-04-20
3. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer;Journal of Crystal Growth;2016-01
4. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE;Journal of Semiconductors;2015-08
5. Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate;Journal of Crystal Growth;2015-04
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