Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs-Reference-Cited by-同舟云学术

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Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs

Published:2009-04 Issue:8 Volume:311 Page:2317-2320
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schramm A.,Tukiainen A.,Aho A.,Pessa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Quantum Dot Heterostructures;Bimberg,1999

2. Nano-Optoelectronics;Grundmann,2002

3. Quantum Dot Lasers;Ustinov,2003

4. New MBE growth method for InSb quantum well boxes

5. Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxially Self-Assemblied Quantum Dot Pairs;Advanced Optical Materials;2013-02-28

2. Temperature-dependent preferential formation of quantum structures upon the droplet epitaxy;Applied Physics Letters;2012-04-09

3. Insight into optical properties of strain-free quantum dot pairs;Journal of Nanoparticle Research;2011-01-25

4. Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy;Nano Letters;2010-03-31

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