Lateral variations in self-assembled InGaAs quantum dot distributions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
2. Self-assembled (In,Ga)As/GaAs quantum-dot nanostructures: strain distribution and electronic structure
3. 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
4. Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm
5. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
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1. Ultrahigh in-plane thermoelectric performance in self-assembled PbSe:Au films with vertically aligned nanopillars;Acta Materialia;2022-04
2. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing;Journal of Alloys and Compounds;2016-01
3. Precise Tuning of (YBa2Cu3O7-δ)1-x:(BaZrO3)xThin Film Nanocomposite Structures;Advanced Functional Materials;2014-06-23
4. Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces;Materials Letters;2011-05
5. Self-Assembled Heteroepitaxial Oxide Nanocomposite Thin Film Structures: Designing Interface-Induced Functionality in Electronic Materials;Advanced Functional Materials;2010-06-08
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