Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
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1. Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells;Solar Energy Materials and Solar Cells;2020-04
2. Control wafer bow of InGaP on 200 mm Si by strain engineering;Semiconductor Science and Technology;2017-11-08
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4. Quantitative atomic resolution at interfaces: Subtraction of the background in STEM images with the example of (Ga,In)P/GaAs structures;Journal of Applied Physics;2017-01-14
5. Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography;Thin Solid Films;2013-05
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