Growth of (101¯3¯) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer
2. High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
3. High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy
4. Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates
5. Structural and optical properties of nonpolar GaN thin films
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluations of the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the m-plane (101̄0) sapphire substrate;CrystEngComm;2023
2. Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy;Journal of Crystal Growth;2022-10
3. A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition;Semiconductor Science and Technology;2022-05-05
4. Semipolar (112̅2) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response;ACS Applied Materials & Interfaces;2022-04-29
5. Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films;CrystEngComm;2021
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3