Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

Published:2014-04 Issue: Volume:392 Page:30-33
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sasaki Kohei,Higashiwaki Masataka,Kuramata Akito,Masui Takekazu,Yamakoshi Shigenobu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

4. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

5. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

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