Anisotropic study of thermal stresses induced by diameter fluctuation during Czochralski silicon single crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. The effect of crystal radius fluctuations on the stress field in LEC gallium arsenide
2. Impact of diameter fluctuations on thermal stresses during Czochralski silicon growth
3. The effect of interface shape on thermal stress during Czochralski crystal growth
4. Dislocation density evaluation using dislocation kinetics model
5. Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations
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1. Simulation of thermoelastic coupling in silicon single crystal growth based on alternate two-stage physics-informed neural network;Engineering Applications of Artificial Intelligence;2023-08
2. Numerical investigation of impact of crystal diameter fluctuations on intrinsic point defects distribution in Si crystal grown by Czochralski method;Journal of Crystal Growth;2022-10
3. Numerical simulation and global heat transfer computations of thermoelastic stress in Cz silicon crystal;International Journal of Materials Research;2019-10-16
4. Investigation of pinholes in Czochralski silicon ingots in relation to structure loss;Journal of Crystal Growth;2019-03
5. Three-dimensional modelling of thermal stress in floating zone silicon crystal growth;IOP Conference Series: Materials Science and Engineering;2018-05
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