Effect of nucleation on instability of step meandering during step-flow growth on vicinal 3C-SiC (0001) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
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1. Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth;Journal of Vacuum Science & Technology A;2023-10-26
2. Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage;Journal of Vacuum Science & Technology A;2023-06-29
3. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal;Journal of Crystal Growth;2023-06
4. Early stage nucleation mechanism for SiC(0001) surface epitaxial growth;Journal of Vacuum Science & Technology A;2022-05
5. Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A kinetic Monte Carlo study;Journal of Applied Physics;2022-03-28
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