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Compensation processes in high-resistivity CdZnTe crystals doped with In/Al

  • Published:2016-10 Issue: Volume:451 Page:150-154
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Nan Ruihua,Wang Tao,Xu Gang,Zhu Man,Jie Wanqi

Funder

National Natural Science Foundation of China

NWPU

Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Cadmium zinc telluride and its use as a nuclear radiation detector material;Schlesinger;Mater. Sci. Eng. R,2001

2. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe;Zha;J. Appl. Phys.,2014

3. What causes high resistivity in CdTe;Biswas;New J. Phys.,2012

4. Point defects in CdZnTe crystals grown by different techniques;Gul;J. Electron. Mater.,2011

5. Fundamental studies on Bridgman growth of CdTe;Rudolph;Prog. Cryst. Growth Charact.,1994

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5. EFFECT OF DEFECTS ORIGINATING UNDER THE PROTON IRRADIATION ON THE ELECTROPHYSICAL AND DETECTOR PROPERTIES OF CdTe:Cl AND CdZnTe;Problems of Atomic Science and Technology;2021-04-07
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