Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. The mechanism of swirl defects formation in silicon
2. Refutation for the comment on our papers by Jan Vanhellemont et al.
3. Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results
4. Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt
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1. Shock-wave Processes in the Electric Explosion of Thin-Film Systems on Silicon;Silicon;2022-10-10
2. Thermal stress relaxation phenomenon through forming the interstitial region in CZ silicon pulled with rapid and slow cooling heat shields;Progress in Crystal Growth and Characterization of Materials;2022-08
3. Mechanism to form ring-like distributed oxidation-induced stacking fault bands through relaxing thermal stress during stopping the growth in CZ silicon crystals;Journal of Crystal Growth;2022-07
4. Rapid hybrid perovskite film crystallization from solution;Chemical Society Reviews;2021
5. Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth;Progress in Crystal Growth and Characterization of Materials;2019-02
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