Intrasurface electron transition contribution to energy of adsorption of silicon at the SiC(0001) surface – A density functional theory (DFT) study-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Intrasurface electron transition contribution to energy of adsorption of silicon at the SiC(0001) surface – A density functional theory (DFT) study

Published:2017-06 Issue: Volume:468 Page:870-873
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Krukowski Stanisław,Sołtys Jakub,Piechota Jacek

Funder

Polish National Science Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Advances in Silicon Carbide Electronics

2. SiC properties, 〈http://www.ioffe.ru/SVA/NSM/Semicond/SiC/thermal.html〉 (accessed 25.09.15).

3. Defect formation and reduction during bulk SiC growth;Ohtani,2004

4. Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals

5. Open Core Dislocations and Surface Energy of SiC

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Directional surface hydroxylation on 6H-SiC induces surface electron polarization and proton activation promoting photocatalytic water splitting for hydrogen;International Journal of Hydrogen Energy;2024-01

2. Enhanced photocatalytic hydrogen production over Au/SiC for water reduction by localized surface plasmon resonance effect;Applied Surface Science;2018-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP