Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Properties of CdZnTe crystals grown by a high pressure Bridgman method
2. Vertical bridgman growth and characterization of large-diameter single-crystal CdTe
3. High quality, single crystal CdTe grown by a modified horizontal Bridgman technique
4. Bridgman solidification of GaSb in space
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1. Numerical and experimental investigation of CdZnTe growth by the boron oxide encapsulated vertical Bridgman method;International Journal of Heat and Mass Transfer;2021-09
2. Room-temperature X-ray response of cadmium–zinc–telluride pixel detectors grown by the vertical Bridgman technique;Journal of Synchrotron Radiation;2020-01-27
3. Cadmium telluride and cadmium zinc telluride;Single Crystals of Electronic Materials;2019
4. Modification of growth interface of CdZnTe crystals in THM process by ACRT;Journal of Crystal Growth;2018-02
5. Growth and Characterization of Detector-Grade Cd0.9Zn0.1Te Crystals by the Traveling Heater Method with the Accelerated Crucible Rotation Technique;Journal of Electronic Materials;2017-10-30
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