HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface-Reference-Cited by-同舟云学术

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HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface

Published:2020-10 Issue: Volume:547 Page:125800
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shen Guiying,Zhao Youwen,Sun Jing,Liu Jingming,Xie Hui,Yang Jun,Dong Zhiyuan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Nanometre-scale electronics with III-V compound semiconductors;del Alamo;Nature,2011

2. III-V/Ge Channel Engineering for Future CMOS;Wistey;ECS Trans.,2009

3. High-frequency operation of a mid-infrared interband cascade system at room temperature;Lotfi;Appl. Phys. Lett.,2016

4. Low-threshold InAs-based interband cascade lasers operating at high temperatures;Li;Appl. Phys. Lett.,2015

5. Dislocation velocities in InAs and GaSb;Choi;Jpn. J. Appl. Phys.,1978

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method;Materials Science in Semiconductor Processing;2023-11

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