Influences of growth parameters on the reaction pathway during GaN synthesis
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes;Nakamura;Appl. Phys. Lett.,1994
2. GaN monolithic power amplifiers for microwave backhaul applications;Quaglia;Electronics,2016
3. F.H. Yang, Modern metal-organic chemical vapor deposition (MOCVD) reactors and growing nitride-based materials. Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications, 2014, pp. 27–65.
4. Analysis of the gas phase kinetics active during GaN deposition from NH3 and Ga(CH3)3;Ravasio;J. Phys. Chem. A,2015
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