Numerical modeling study on the epitaxial growth of silicon from dichlorosilane
Author:
Funder
MOTIE
KSRC
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Vapour growth mechanism of silicon layers by dichlorosilane decomposition;Morosanu;J. Cryst. Growth,1983
2. Silicon selective epitaxial growth at reduced pressure and temperature;Regolini;J. Cryst. Growth,1989
3. Selective epitaxial growth by rapid thermal processing;Lee;Appl. Phys. Lett.,1990
4. Silicon epitaxial growth by rapid thermal processing chemical vapor deposition;Lee;Appl. Phys. Lett.,1989
5. Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane;Regolini;Appl. Phys. Lett.,1989
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