Advanced Germanium MOS Devices
Author:
Publisher
Elsevier
Reference62 articles.
1. The International Technology Roadmapfor Semiconductors,2004
2. Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI
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5. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study
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1. Laser ion implantation of Ge in SiO2 using a post-ion acceleration system;Laser and Particle Beams;2016-12-22
2. Correlation of optical reflectivity with numerical calculations for a two-dimensional photonic crystal designed in Ge;The European Physical Journal D;2015-12
3. Strained-Germanium Nanostructures for Infrared Photonics;ACS Nano;2014-03-13
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