On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma-Reference-Cited by-同舟云学术

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On mechanisms to control SiO2 etching kinetics in low-power reactive-ion etching process using CF4 + C4F8 + Ar + He plasma

Published:2023-10 Issue: Volume:216 Page:112484
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Choi Gilyoung,Efremov Alexander^ORCID,Lee Dae-Kug^ORCID,Cho Choong-Ho,Kwon Kwang-Ho^ORCID

Funder

Ministry of Education

National Research Foundation of Korea

Korea University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference44 articles.

1. Silicon VLSI Technology: Fundamentals, Practice and Modeling;Plummer,2020

2. The Science and Engineering of Microelectronic Fabrication;Campbell,2001

3. Plasma processing of low-k dielectrics;Baklanov;J. Appl. Phys.,2013

4. Emerging Applications for high K materials in VLSI technology;Clark;Materials,2014

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Depth Image Transfer of Large-Area Optical Quartz Materials Based on Pulsed Ion Beam;Micromachines;2024-07-15

2. Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool;Journal of Vacuum Science & Technology A;2024-07-15

3. Comparative study of CF₄ + X + He (X = C₄F₈ or C₄H₂F₆) plasmas for high aspect ratio etching of SiO₂ with ACL mask;Plasma Processes and Polymers;2024-07-02

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