Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices-Reference-Cited by-同舟云学术

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Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

Published:2017-06 Issue: Volume:140 Page:35-41
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Lee Ke-Jing,Chang Yu-Chi,Lee Cheng-Jung,Wang Yeong-Her

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference25 articles.

1. Two series oxide resistors applicable to high speed and high Density nonvolatile memory;Lee;Adv. Mater.,2007

2. A self-rectifying AlOy bipolar RRAM with sub-50-uA set/reset current for cross-bar architecture;Tran;IEEE Electron Device Lett.,2012

3. (In,Sn)2O3/TiO2/Pt schottky-type Diode switch for the TiO2 resistive switching memory array;Shin;Appl. Phys. Lett.,2008

4. Rewritable switching of one Diode–one resistor nonvolatile organic memory Devices;Cho;Adv. Mater,2010

5. Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non-volatile memory;Lee;Adv. Funct. Mater,2009

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