Structural and electrical properties of amorphous GaAs sputtered at high substrate temperature (220 and 400°C)
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference29 articles.
1. The physics of amorphous silicon thin-film devices and their application to document processing
2. Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate
3. Electrical properties of a-GaAs/c-Si (p) heterojunctions
4. Electrical characteristics of amorphous GaAs-n-crystalline Si heterojunctions
5. Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer
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2. Influence of Process Parameters on the RF Sputtered GaP Thin Films;Journal of Materials Science & Technology;2013-09
3. Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering;Journal of Non-Crystalline Solids;2013-01
4. Optical absorption of radio frequency sputtered GaAs(Ti) films;Journal of Materials Science: Materials in Electronics;2012-08-14
5. Optical properties of GaAs films deposited via pulsed ion ablation;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2011-04
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