High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference22 articles.
1. Transport and structural properties of silicon films in the amorphous-to-microcrystalline transition region
2. Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition
3. Ge-dot/Si multilayered structures through Ni-induced lateral crystallization
4. High-rate deposition of microcrystalline silicon p-i-n solar cells in the high pressure depletion regime
5. High-rate microcrystalline silicon deposition for p–i–n junction solar cells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Segregations and desorptions of Ge atoms in nanocomposite Si 1− x Ge x films during high-temperature annealing;Chinese Physics B;2017-12
2. Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD;AIP Advances;2015-11
3. Microporous N-doped carbon film produced by cold atmospheric plasma jet and its cell compatibility;Vacuum;2014-10
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