Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials-Reference-Cited by-同舟云学术

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Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials

Published:2016-05 Issue: Volume:127 Page:82-87
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yang Kyung Chae,Park Sung Woo,Jeon Min Hwan,Pham Viet Phuong,Lee Du Yeong,Shim Tae Hun,Park Jea Gun,Yeom Geun Young

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference21 articles.

1. Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

2. Plasma etch technologies for the development of ultra-small feature size transistor devices

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1. Art etching of graphene;Nanoscale Horizons;2024

2. Effect of various pulse plasma techniques on TiO2 etching for metalens formation;Vacuum;2023-06

3. Anisotropic etching of CoFeB magnetic thin films in C 2 H 5 OH/Ar plasma;Thin Solid Films;2017-09

4. Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium;ECS Journal of Solid State Science and Technology;2017

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