Ba x Sr 1−x TiO 3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N 2 ambient-Reference-Cited by-同舟云学术

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Ba x Sr 1−x TiO 3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N 2 ambient

Published:2017-06 Issue: Volume:140 Page:3-6
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kao Chyuan-Haur,Chiu Wang Ting,Chen Yi Cian,Yang Luo,Tsai Shin Chieh,Chang Ting Wei,Tsai Ching-Tsan,Lin Chan-Yu,Chen Hsiang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference16 articles.

1. Development of an ion-sensitive solid-state device for neurophysiological measurements;Bergveld;IEEE Trans. Biomed. Eng.,1970

2. Effects of postannealing on the bulk and interfacial characteristics of ZrO2 gate dielectrics prepared on Si by metalorganic chemical vapor deposition;Huang;J. Vac. Sci. Technol. B,2004

3. Effect of nitrogen additives on thermal decomposition of cotton;Gaan;J. Anal. Appl. Pyrolysis,2009

4. Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface;Rozen;J. Appl. Phys.,2008

5. Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering;Quah;J. Alloys Compd.,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Miniaturized pH‐Sensitive Field‐Effect Capacitors with Ultrathin Ta ₂ O ₅ Films Prepared by Atomic Layer Deposition;physica status solidi (a);2022-02-03

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