Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films-Reference-Cited by-同舟云学术

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Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Published:1997-12 Issue:1-3 Volume:50 Page:134-141
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Edwards N.V,Yoo S.D,Bremser M.D,Zheleva Ts,Horton M.N,Perkins N.R,Weeks Jr T.W,Liu H,Stall R.A,Kuech T.F,Davis R.F,Aspnes D.E

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

2. Variation of GaN valence bands with biaxial stress and quantification of residual stress

3. D.E. Aspnes, A.A. Studna, Appl. Opt. 14 (1975) 220; Rev. Sci. Instrum. 49, (1978) 291.

4. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

5. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

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1. In Situ Characterization of Epitaxy;Handbook of Crystal Growth;2015

2. Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space;Journal of Applied Physics;2001-06-15

3. Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures;Journal of Applied Physics;2001-03

4. Optical characterization of wide bandgap semiconductors;Thin Solid Films;2000-03

5. Residual stress in III–V nitrides;III-Nitride Semiconductors: Electrical, Structural and Defects Properties;2000

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