Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines-Reference-Cited by-同舟云学术

Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

Published:1999-07 Issue: Volume:61-62 Page:506-515
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Soukiassian P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference60 articles.

1. W.J. Choyke, H.M. Matsunami, G. Pensl (Eds.), Silicon Carbide, A Review of Fundamental Questions and Applications to Current Device Technology, vol. I–II, Akademie Verlag, Berlin, 1998 and references therein.

2. Figure of merit for semiconductors for high-speed switches

3. Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin films

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of AlN buffer layers on MBE grown cubic GaN layers;Gallium Nitride Materials and Devices XVIII;2023-03-15

2. AlN Buffer Enhances the Layer Quality of MBE-Grown Cubic GaN on 3C-SiC;Crystal Growth & Design;2022-10-06

3. Diffusion of fission products and radiation damage in SiC;Journal of Physics D: Applied Physics;2013-10-28

4. 3C-SiC(001)-3 × 2 reconstructed surface analyzed by high-resolution medium energy ion scattering;Surface Science;2012-12

5. Interaction of atomic hydrogen with the β-SiC(100) 3×2 surface and subsurface;The Journal of Chemical Physics;2007-10-28