Heteroepitaxial growth of 3C–SiC using HMDS by atmospheric CVD
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Epitaxial growth and electric characteristics of cubic SiC on silicon
2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
3. Growth of crystalline 3C‐SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane
4. Chemical vapor deposition of silicon carbide thin films on titanium carbide, using 1,3 disilacyclobutane
5. Deposition of cubic SiC films on silicon using dimethylisopropylsilane
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2. Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si;Journal of Applied Physics;2019-06-21
3. Activation energy of subgrain growth process and morphology evolution in β-SiC/Si(111) heterostructures synthesized by pulse photon treatment method in a methane atmosphere;Journal of Materials Science: Materials in Electronics;2018-10-05
4. Preparation of silicon carbide coating by chemical vapor deposition by using hexamethyldisilylamine precursor;Surface and Coatings Technology;2018-01
5. The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS;Materials Research Innovations;2015-12-14
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