Design of a 600 V silicon carbide vertical power MOSFET
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. High Power and High Frequency Silicon Carbide Devices
2. Optimum semiconductors for high-power electronics
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4. High-voltage double-implanted power MOSFET's in 6H-SiC
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