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Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

  • Published:1999-07 Issue: Volume:61-62 Page:446-449
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Dmitriev V,Rendakova S,Kuznetsov N,Savkina N,Andreev A,Rastegaeva M,Mynbaeva M,Morozov A

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

2. Overview of SiC power electronics

3. Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P+N Junction Rectifiers

4. Effects of Surface Defects on the Performance of 4H- and 6H-SiC pn junction Diodes;Kimoto,1998

5. Progress in SiC: from Materials growth to Commercial Device Development;Carter, Jr,1998

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