p and n type doping of cubic GaN on SiC (001)-Reference-Cited by-同舟云学术

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p and n type doping of cubic GaN on SiC (001)

Published:2001-05 Issue:1-3 Volume:82 Page:59-61
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Martinez-Guerrero E,Daudin B,Feuillet G,Mariette H,Genuist Y,Fanget S,Philippe A,Dubois C,Bru-Chevallier C,Guillot G,Aboughe Nze P,Chassagne T,Monteil Y,Gamez-Cuatzin H,Tardy J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Effect of Si doping on cubic GaN films grown on GaAs(100)

2. Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition

3. Proc. 2nd Int. Symp. Blue Laser and Light Emitting Diodes, Chiba, Japan;Tanaka,1998

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1. Review of the Properties of GaN, InN, and Their Alloys Obtained in Cubic Phase on MgO Substrates by Plasma-Enhanced Molecular Beam Epitaxy;Crystals;2024-09-11

2. MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1);Journal of Crystal Growth;2023-06

3. Cubic GaN and InGaN/GaN quantum wells;Applied Physics Reviews;2022-12

4. Influence of Al _x Ga_1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001);Journal of Physics D: Applied Physics;2022-02-02

5. The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers;Journal of Applied Physics;2021-08-28

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