Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy-Reference-Cited by-同舟云学术

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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Published:2000-08 Issue:1 Volume:77 Page:50-54
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Savkina N.S.,Lebedev A.A.,Davydov D.V.,Strel'chuk A.M.,Tregubova A.S.,Raynaud C.,Chante J.-P.,Locatelli M.-L.,Planson D.,Milan J.,Godignon P.,Campos F.J.,Mestres N.,Pascual J.,Brezeanu G.,Badila M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

2. Measurement of electrophysical properties of silicon carbide epitaxial films

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype;Semiconductors;2023-06

2. 3C-SiC growth by sublimation in vacuum technology optimization;Journal of Physics: Conference Series;2020-12-01

3. Sublimation Growth of Hexagonal and Cubic SiC Layers;Reference Module in Materials Science and Materials Engineering;2016

4. Irradiation of sublimation-grown p-SiC with 0.9-MeV electrons;Technical Physics Letters;2014-08

5. Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals;Journal of Alloys and Compounds;2014-02

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