Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors-Reference-Cited by-同舟云学术

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Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors

Published:2002-02 Issue:1-3 Volume:89 Page:101-105
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schmidt O.G,Denker U,Dashiell M,Jin-Phillipp N.Y,Eberl K,Schreiner R,Gräbeldinger H,Schweizer H,Christiansen S,Ernst F

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Atomic force microscopy study of strained InGaAs quantum disks self‐organizing on GaAs (n11)B substrates

2. Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpitaxial Systems

3. Evolution of hexagonal lateral ordering in strain-symmetrizedPbSe/Pb1−xEuxTequantum-dot superlattices

4. Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates

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1. Nanostructures and Quantum Dots Development with Molecular Beam Epitaxy;Advanced Nano Deposition Methods;2016-09-08

2. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots;Journal of Applied Physics;2016-05-28

3. SiGe quantum dot crystals with periods down to 35 nm;Nanotechnology;2015-06-02

4. Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs;Journal of Luminescence;2014-10

5. Highly uniform arrays of epitaxial Ge quantum dots with interdot spacing of 50 nm;Journal of Materials Research;2014-09-26

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