The origin of photoluminescence in Ge-implanted SiO2 layers-Reference-Cited by-同舟云学术

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The origin of photoluminescence in Ge-implanted SiO2 layers

Published:1998-12 Issue:1-4 Volume:80 Page:281-284
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Kim H.B.,Chae K.H.,Whang C.N.,Jeong J.Y.,Oh M.S.,Im S.,Song J.H.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference15 articles.

1. Photoluminescence of Si Microcrystals Embedded inSiO2Glass Films

2. Quantum size effects on photoluminescence in ultrafine Si particles

3. Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing

4. Ion Implantation;Rimini,1995

5. Optical and structural characterization of implanted nanocrystalline semiconductors

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1. Microstructure and room temperature ferromagnetism of double-layered MnxGe1−xTe polycrystalline modified by the space-layer thickness;Applied Surface Science;2024-06

2. Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition;Journal of Alloys and Compounds;2023-12

3. Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films;Thin Solid Films;2022-03

4. Preparation and characterization of SiO2 nanowires using a SnO2 catalyst;Physics Letters A;2020-03

5. Fabrication of ultra-high numerical aperture GeO_2-doped fiber and its use for broadband supercontinuum generation;Applied Optics;2017-11-20

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