Operation of a bipolar transistor with a tunnel MOS emitter and an induced base from 4.2 to 300K
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference14 articles.
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2. Cressler, J.D., Tang, D.D., Jenkins, K.A., Li, G-P. and Yang, E.S., On the low-temperature state and dynamic properties of high-performance silicon bipolar transistors. IEEE Trans. Electron Devices, 1989, 36 (8), Special issue on low-temperature semiconductor electronics, pp. 1489–1502.
3. Cressler, J.D., Silicon bipolar transistor: a viable candidate for high-speed applications at liquid-nitrogen temperature. Cryogenics, 1990, 30 (12), Special issue—Low temperature Electronics, Conference Proceedings, Berkeley, CA, USA, 23–26 April 1990, pp. 1036–1047.
4. Cryogenic operation of power bipolar transistors;Singh;Solid-State Electron.,1996
5. Concepts of gain at an oxide–semiconductor interface and their application to the TETRAN—a Tunnel Emitter TRANsistor—and to the MIS switching device;Simmons;Solid-State Electron.,1986
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