Electronic properties of two-dimensional G/GaN(SiC) van der Waals heterostructures-Reference-Cited by-同舟云学术

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Electronic properties of two-dimensional G/GaN(SiC) van der Waals heterostructures

Published:2020-10 Issue: Volume:124 Page:114277
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Zheng Jiangshan,Li Enling,Cui Zhen,Ma Deming

Funder

National Natural Science Foundation of China

Natural Science Key Project Foundation of Shaanxi Province

Industrial Key Project Foundation of Shaanxi Province

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference58 articles.

1. 2D materials and van der Waals heterostructures

2. Calculating critical temperatures for ferromagnetic order in two-dimensional materials

3. Electronic and Optical Properties of Two-Dimensional GaN from First-Principles

4. Crystal field, ligand field, and interorbital effects in two-dimensional transition metal dichalcogenides across the periodic table

5. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

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