Optical transitions and interface structure in (GaP)m/(AlP)n modulated period superlattices
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference30 articles.
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3. Short-Period Superlattices of (GaP)n(AlP)nGrown by Metalorganic Vapor Phase Epitaxy
4. Optical properties of GaP/AlP short‐period superlattices grown by gas source molecular beam epitaxy
5. Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattice using tertiarybutylphosphine
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1. The structural, electronic and optical properties of novel GaP/ZnS/AlP multilayer heterostructure: first-principles study;Materials Research Express;2019-07-24
2. Studying structural, electronic and optical properties of zinc-blende Ga1−xAlxP at normal and under pressure by means of first principle;Materials Research Express;2015-10-16
3. Light emission despite doubly-forbidden radiative transitions in AlP/GaP quantum wells: Role of localized states;Journal of Applied Physics;2013-10-28
4. 6.7 Growth and preparation of quantum dots and quantum wells on GaP substrates;Growth and Structuring;2013
5. Quantum size effect on excitons in GaxIn1−xP/GaAs quantum well;Physica E: Low-dimensional Systems and Nanostructures;2011-04
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