Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Self-Assembled InGaAs/GaAs Quantum Dots;Sugawara,1999
2. Faceting evolution during self-assembling of InAs/InP quantum wires
3. Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation
4. Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
5. Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates
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1. Optical properties of spherical quantum dot in the presence of donor impurity under the magnetic field;Physica B: Condensed Matter;2021-07
2. Theory of electronic and optical properties for different shapes of InAs/In0.52Al0.48As quantum wires;Physica E: Low-dimensional Systems and Nanostructures;2016-01
3. A DFT study on ternary compounds of GaAlAs and InAlAs nanoclusters;Materials Science in Semiconductor Processing;2014-11
4. Shallow impurity states in AlxGa1–xAs cylindrical quantum wire;Journal of Semiconductors;2014-08
5. Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure;Journal of Applied Physics;2011-06-15
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