Gated spin relaxation in (110)-oriented quantum wells-Reference-Cited by-同舟云学术

Gated spin relaxation in (110)-oriented quantum wells

Published:2004-07 Issue:3-4 Volume:23 Page:309-314
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Henini M,Karimov O.Z,John G.H,Harley R.T,Airey R.J

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Spin Relaxation in GaAs(110) Quantum Wells

2. Spin relaxation in optically excited quantum wells

3. Gateable Suppression of Spin Relaxation in Semiconductors

4. G. Salis, Y. Kato, K. Ensslin, D.C. Driscoll, A.C. Gossard, D.D. Awschalom, Nature (London) 414 (2001) 619; for review see D.D. Awschalom, N. Samarth, Optical manipulation, transport and storage of spin coherence in semiconductors, in: D.D. Awschalom, D. Loss, N. Samarth (Eds.), Semiconductor Spintronics and Quantum Computation, Springer, Berlin, 2002.

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