Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Wide Bandgap Semiconductor-Based Surface-Emitting Lasers: Recent Progress in GaN-Based Vertical Cavity Surface-Emitting Lasers and GaN-/ZnO-Based Polariton Lasers
3. InGaN laser diodes with 50 mW output power emitting at 515 nm
4. 500 nm electrically driven InGaN based laser diodes
5. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN
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1. Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple‐Quantum‐Well Near‐Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2021-11-19
2. First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices;Revista Mexicana de Física;2021-01-07
3. Investigation of optical polarization characteristics for an AlGaN-based quantum well structure;Japanese Journal of Applied Physics;2020-07-16
4. Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes;AIP Advances;2018-01
5. Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output;Optik;2017-07
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