Anisotropy of the effective Landé factor in AlxGa1−xAs parabolic quantum wells under applied magnetic fields
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. gfactor of electrons in an InAs quantum well
2. Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
3. Spin lifetimes and g-factor tuning in Si/SiGe quantum wells
4. Electron g factor engineering in III-V semiconductors for quantum communications
5. k→·p→perturbation theory in III-V compounds and alloys: a reexamination
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1. Anisotropy of the electron g factor in quantum wells based on cubic semiconductors;Semiconductors;2013-09
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