Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode-Reference-Cited by-同舟云学术

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Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode

Published:2010-09 Issue:10 Volume:42 Page:2749-2752
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Mehta Minisha,Reuter Dirk,Melnikov Alexander,Wieck Andreas D.,Michaelis de Vasconcellos Steffen,Baumgarten Tim,Zrenner Artur,Meier Cedrik

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Quantum Dot Heterostructures;Bimberg,1999

2. A Quantum Dot Single-Photon Turnstile Device

3. A single-electron transistor made from a cadmium selenide nanocrystal

4. Electrically Driven Single-Photon Source

5. Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography

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1. Stressor-Induced Site Control of Quantum Dots for Single-Photon Sources;Semiconductor Nanophotonics;2020

2. Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy;physica status solidi (b);2018-11-23

3. On-demand single-photons from electrically-injected site-controlled pyramidal quantum dots;Journal of Physics D: Applied Physics;2018-11-21

4. Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam;Physica E: Low-dimensional Systems and Nanostructures;2017-03

5. Flying qubits and entangled photons;Laser & Photonics Reviews;2013-08-19

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