Anti-Stokes photoluminescence between Inx(Al0.17Ga0.83)1−xAs/Al0.17Ga0.83As quantum wells with different x values-Reference-Cited by-同舟云学术

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Anti-Stokes photoluminescence between Inx(Al0.17Ga0.83)1−xAs/Al0.17Ga0.83As quantum wells with different x values

Published:2006-06 Issue:1 Volume:33 Page:196-200
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Machida S.,Tadakuma T.,Fujiwara K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures

2. Anti-Stokes Luminescence in High Quality Quantum Wells

3. Dynamics of anti-Stokes photoluminescence in type-IIAlxGa1−xAs−GaInP2heterostructures: The important role of long-lived carriers near the interface

4. Photoluminescence up-conversion inGaAs/AlxGa1−xAsheterostructures

5. Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena inGaAs/AlxGa1−xAsandInGaP2/AlxGa1−xAsheterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2010-09

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