Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Interface roughness scattering in GaAs/AlAs quantum wells
2. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
3. Molecular‐beam epitaxial growth and characterization of silicon‐doped AlGaAs and GaAs on (311)AGaAs substrates and their device applications
4. High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction
5. Mobility anisotropy of two‐dimensional hole systems in (311)A GaAs/AlxGa1−xAs heterojunctions
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