Binding energy and self-polarization as function of energy density in GaAs/AlAs quantum well wires
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Position-dependence of the impurity binding energy in quantum well wires
2. Hydrogenic impurity states in quantum-well wires: Shape effects
3. Hydrogen impurities in quantum well wires
4. Effects of an applied electric field on the binding energy of shallow donor impurities in GaAs low-dimensional systems
5. Density of shallow-donor impurity states in rectangular cross section GaAs quantum-well wires under applied electric field
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1. Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials;physica status solidi (b);2022-04-09
2. The normalized transition energies between ground (1s) and first excited (1p) states in a GaAs/Ga1-xAlxAs spherical quantum dot (SQD);Superlattices and Microstructures;2021-08
3. Laser field effect on self-polarization of a donor impurity in a finite Ga1−xAlxAs/GaAs quantum well;Physica B: Condensed Matter;2021-05
4. Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well;Indian Journal of Physics;2020-09-07
5. The effects of geometrical shape and impurity position on the self-polarization of a donor impurity in an infinite GaAs/AlAs tetragonal quantum dot;Indian Journal of Physics;2020-07-29
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