Landau levels in a novel two-dimensional electron system interacting with charged quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. GaAs/n-AlGaAs field-effect transistor with embedded InAs quantum traps and its programmable threshold characteristics
2. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
3. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
4. Optically induced bistability in the mobility of a two-dimensional electron gas coupled to a layer of quantum dots
5. Detection of single photons using a field-effect transistor gated by a layer of quantum dots
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