Simulation of metallic impurity gettering in silicon by MeV ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. The mechanism of iron gettering in boron‐doped silicon
2. Gettering of Fe to below 1010 cm−3 in MeV self‐implanted Czochralski and float zone silicon
3. Metallic Impurity Gettering and Secondary Defect Formation in Megaelectron Volt Self‐Implanted Czochralski and Float‐Zone Silicon
4. Metallic Impurity Gettering in MeV Implanted Si
5. Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells;IEEE Journal of Photovoltaics;2018-01
2. Gettering of iron in silicon by boron implantation;Journal of Materials Science: Materials in Electronics;2008-02-23
3. Fe and Cu in Si: Lattice sites and trapping at implantation-related defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
4. Evolution of He-induced cavities and related defects in silicon studied by direct scattering of channeled particles;The European Physical Journal Applied Physics;2002-11-29
5. Modeling of Cu gettering in p- and n-type silicon and in poly-silicon;Applied Physics A: Materials Science & Processing;2002-10-01
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