Activation and diffusion during rapid thermal annealing of arsenic and boron implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference26 articles.
1. Rapid thermal annealing of arsenic and boron‐implanted silicon
2. Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon
3. Rapid isothermal annealing of boron ion implanted junctions
4. Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source
5. Rapid thermal annealing characteristics of As+‐ and BF+2‐implanted Si
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1. A novel to control defects of P-N semiconductor device by SRFE process;IOP Conference Series: Materials Science and Engineering;2021-02-01
2. On the theory of transient enhanced diffusion in boron-implanted silicon;Radiation Effects and Defects in Solids;1991-08
3. Rapid thermal annealing of high dose arsenic-implanted silicon;Applied Physics A Solids and Surfaces;1990-07
4. Channeling and nuclear reaction analysis of shallow B‐ and BF2‐ implanted Si;Journal of Applied Physics;1988-11
5. Rapid Thermal Annealing of Ion Implanted Semiconductors;Nuclear Physics Applications on Materials Science;1988
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